Multi‐channel AlGaN/GaN Schottky Barrier Diode with Low Turn‐on Voltage and On‐resistance

This work proposed multi-channel AlGaN/GaN Schottky barrier diodes (SBDs) with recess structure and tungsten (W) anode. The multi-channel heterostructure improves the current drive capability of the devices and achieves a lower forward voltage (VF). W anode reduces the turn-on voltage (VON) due to its lower work-function and direct contact with all two-dimensional electron gas (2DEG) channels in the recessed area. Post anode annealing is utilized to improve the interface between the metal and GaN etching surface. The fabricated devices with a 6.5-μm anode-cathode distance (LAC) achieve an ultralow VON of 0.29 V, VF of 0.69 V, and a low on-resistance (RON) of 2.39 Ω·mm. The capacitance effect of multi-channel heterostructures has been analyzed via the capacitance-voltage characteristics, showing the great potential of multi-channel AlGaN/GaN SBDs for high-frequency applications. This article is protected by copyright. All rights reserved.