A new high-voltage diode structure with backside double injection holes (BDIH)

A 3.3-kV silicon power diode with backside double injection holes is presented in this paper, which has been studied according to TCAD simulations. By setting the backside p-regions on the cathode side of the active area and setting the inside n+ layer in the backside p-regions, that is, the combination of P+N-P+N+ structure, P+N-P+ structure and P+N-N+ structure is set from the anode to the cathode. This new diode structure combines the advantages of the RFC diode and the CIBH diode, which could greatly improve the over-current turn-off ruggedness and soft reverse recovery characteristics at low current densities.