Failure Analysis of Total-Dose Radiation-Induced Degradation on FinFET Logic ICs

Abstract X-ray imaging for both Failure Analysis and In-line Inspection has been utilized widely in the semiconductor industry, especially for surface mount device applications. During the investigation of total ionizing dose (TID) induced degradation of logic ICs with bulk FinFET technology, we observed that the degradation is mainly in the form of an increase in I/O leakage and IDDQ. Using filters during radiation was shown to impact TID. Failure Analysis was performed to localize the excessive current in both I/O leakage and IDDQ.