Orientation-tunable In_xGa_1−xN nanowires with a high density of basal stacking faults for photoelectrochemical/photocatalytic applications

CrystEngComm（2021）

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摘要

InxGa1−xN nanowires grew along the m-direction (A-NWs) or semipolar-direction (B-NWs) with the presence of a high density of BSFs.

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Orientation-tunable InxGa1−xN nanowires with a high density of basal stacking faults for photoelectrochemical/photocatalytic applications