Contactless Determination of Electric Field in Metal–Insulator–Semiconductor Interfaces by Using Constant DC-Reflectivity Photoreflectance

We applied photoreflectance (PR) spectroscopy for contactless determination of the electric field strength at buried interfaces in metal–insulator–semiconductor (MIS) structures. The PR is an all-optical version of an electromodulated reflectance spectroscopy. The tradeoff of this adoption is that this requires an additional feedback system to eliminate background problems induced by scattered pump light and/or photoluminescence. A microcomputer-based feedback system has been developed for this elimination. Despite the very tiny signal intensity, we successfully attained a sufficiently good signal–noise ratio to determine the electric field strength in oxide-based MIS interfaces that exhibits a large, unwanted photoluminescence signal. The field strength was evaluated to be ca. 0.25 kV/cm.