Фотопроводимость и поглощение инфракрасного излучения в квантовых ямах p-GaAs/AlGaAs

The spectra of low-temperature impurity-assisted far and mid-infrared photoconductivity and absorption in nanostructure with multiple GaAs/AlGaAs quantum wells doped with acceptors are investigated. The experimentally obtained absorption and photoconductivity spectra correlate well with each other. According to the hole and acceptor state energy spectrum calculations the spectral features related to the optical hole transitions from the ground acceptor state to the delocalized states of valence subbands, to the excited acceptor states and to the delocalized states above the quantum well (photoionization) are identified in the absorption and photoconductivity spectra.