A High Capacitive Ratio and Low Actuation Voltage RF MEMS Switch for Multi Band: Design and Performance Analysis.

Radiofrequency (RF) micro-electro-mechanical systems (MEMS) have paid more and more attention to miniaturization and integration in various passive devices in recent years. This paper proposes a multiband RF MEMS switch with a high capacitance ratio, wideband, and low actuation voltage. Then, it is designed, simulated, and fabricated for performance analysis. The designed switch includes four cantilever beams, which are driven by four DC electrodes for different configurations to achieve multiband. Based on the metal-insulator-metal (MIM) floating metal, the capacitance ratio of the switch is effectively improved. The cantilever beam is fixed by introducing the concept of non-uniform meander, which improves the reliability of the switch and reduces the actuation voltage of the switch. Simulation using finite element (FEM) tools proved that the switch has an insertion loss of -0.08dB up to 40GHz and actuation voltage is 2.54V. The maximum isolation is 32.6 dB in C band, 37.2 dB in X band, 42.1dB in Ku band, 47.6 dB in K band, and 58.3dB in Ka band.