Impact of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC (0001) MOSFET

W. Takeuchi, K. Kutsuki, E. Kagoshima, T. Onishi, S. Iwasaki,M. Sakashita, H. Fujiwara, O. Nakatsuka

Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials(2019)

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Key words
mosfet,mechanical uniaxial stress,mobility enhancement,h-sic
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