Elimination of Oxygen Defects in In-Si-O Film and Thin Film Transistor Performance

Effect of storage in air on silicon doped indium oxide (In-Si-O) thin-film transistors fabricated via solution processing has been investigated. The on/off ratio drastically increased from 101 just after fabrication to 105 on the 10-day storage, whereas the mobility slightly decreased from 1.4 cm2/Vs to 0.38 cm2/Vs. Time constant of aging effect was 3.6 days. The behavior suggests that oxygen defects in In-Si-O films, which may be produced during thermal evaporation of Al electrodes under high vacuum, are eliminated.