Слои кремния, гиперпересыщенные теллуром, для фотодиодов видимого и инфракрасного диапазонов

Silicon layers doped with tellurium up to concentration (3–5)·1020 cm-3 have been formed by ion implantation with subsequent pulsed laser annealing. It was shown that 70–90% of the introduced impurity is in the substitution position in the silicon lattice. Si layers Tellurium- hyperdoped silicon layers exhibit significant absorption (35–65%) both in the visible and near IR (1100–2500 nm) spectral ranges, and the absorption increases with increasing wavelength. The current-voltage and capacitance-voltage characteristics, as well as the photosensitivity of photodetectors based on Te-doped silicon layers have been presented and discussed. The residual structural defects in implanted Si layers have been considered by deep-level transient spectroscopy.