Integration of Si0.7Ge0.3 fin onto a bulk-Si substrate and its P-type FinFET device fabricationYongliang Li,Fei Zhao,Xiaohong Cheng,Haoyan Liu,Wenwu WangSemiconductor Science and Technology(2021)引用 1|浏览2暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要