Rotated domains in selective area epitaxy grown Zn₃P₂: formation mechanism and functionality

Nanoscale（2021）

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摘要

Growth process for Zn3P2 nanowires grown on InP at different angles by SAE and formation of rotated domains at (100) and (101) facets.

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selective area epitaxy,zn<sub>3</sub>p<sub>2</sub>,formation mechanism

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Rotated domains in selective area epitaxy grown Zn3P2: formation mechanism and functionality