Semiconductor quantum well based shutters for NIR laser mode-locking with ∼ GHz repetition rate

Abstract Fast semiconductor shutters based on coupled wells were designed in the search for reliable, compact and cheap key element of GHz repetition rate NIR lasers passive mode-locking. Stable 0.98 GHz repetition rate 200-fs Yb:KYW laser pulses were demonstrated for SESAM including semiconductor reflector and a layer of quantum wells. The damage threshold estimate for the SESAM is ∼ 8.87 mJ/cm2. Other type of shutter – DSAM – was developed with dielectric reflector and the layer of quantum wells transferred over reflector. The measured recovery time was about 2-3 ps for both types of saturable absorbers. The efficiency relative to the incident pump power was 57% for the SESAM and 19% for the DSAM. Average output power of 2.54 W for the all-semiconductor shutter (SESAM) and of 0.92 W for the dielectric mirror with a saturable absorber (DSAM) were obtained. Actual state of the art for the shutters design is considered.