МДП транзистор на основе пленки PbSnTe : In с подзатворным диэлектриком Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=--=SUP=-*-=/SUP=-

Results on the creation and properties of transistor-type MIS structures (MIST) with an Al2O3 thin-film gate dielectric based on PbSnTe:In films obtained by molecular beam epitaxy are presented. The source-drain current-voltage characteristics (CVC) and gate characteristics of the MIST at Т = 4.2 К have been investigated. It is shown that in MIST based on PbSnTe:In films with n ~ 1017 cm-3 the modulation of the channel current reaches 7 – 8 % in the range of gate voltages – 10 V < Ugate < + 10 V. The features of the source-drain CVC and the gate characteristics for a pulsed and sawtooth variation of Ugate are considered.