Исследование сильно легированных эпитаксиальных пленок n-3C-SiC, выращенных методом сублимации на основе полуизолирующих подложек 6H-SiC

А.А. Лебедев,В.Ю. Давыдов,И.А. Елисеев,С.П. Лебедев,И.П. Никитина,Г.А. Оганесян, А.Н. Смирнов,Л.В. Шахов

Физика и техника полупроводников（2022）

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Abstract

Heavily doped 3C-SiC films based on semi-insulating 6H-SiC substrates were obtained by sublimation epitaxy. The structural perfection of the obtained samples was monitored by X-ray diffractometry. The measurements of the photoluminescence and Hall effect spectra have confirmed the rather high perfection of the obtained epitaxial layers.

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сильно легированных эпитаксиальных,выращенных методом сублимации на,c-sic,h-sic

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