A 4W V-band MMIC Power Amplifier with 24% Power-Added Efficiency
2021 International Conference on Microwave and Millimeter Wave Technology (ICMMT)（2021）
Abstract
In this paper, A three-stage V-band power amplifier based on 0.1um GaN HEMT technology is reported. The V-band PA offers a small signal gain greater than 18dB and an output power greater than 4W from 57 GHz to 61GHz with an associated power gain greater than 13dB and 24% PAE. Moreover, it achieves a peak output power of 4.9W (36.9dBm) at 60.5GHz in continuous-wave mode with an associated power density of 3.06W/mm. These excellent MMIC results can be attributed to the use of optimized 0.1um GaN HEMT technology with T-shaped gate on the AlGaN/GaN HEMT structure.
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Key words
power-added efficiency,three-stage V-band power amplifier,HEMT technology,V-band PA,signal gain,power gain,PAE,power density,V-band MMIC power amplifier,HEMT structure,T-shaped gate,continuous-wave mode,power 4.9 W,frequency 57.0 GHz to 61.0 GHz,power 4.0 W,size 0.1 mum,AlGaN-GaN
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