SRAM with In-Memory Inference and 90% Bitline Activity Reduction for Always-On Sensing with 109 TOPS/mm² and 749-1,459 TOPS/W in 28nm

ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)（2021）

引用 0|浏览0

暂无评分

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要

SRAM with In-Memory Inference and 90% Bitline Activity Reduction for Always-On Sensing with 109 TOPS/mm2 and 749-1,459 TOPS/W in 28nm