Strongly Anisotropic Strain‐Tunability of Excitons in Exfoliated ZrSe ₃ (Adv. Mater. 1/2022)

Strain Engineering In article number 2103571, Roberto D'Agosta, Andres Castellanos-Gomez, and co-workers report a method to apply uniaxial strain along different crystal orientations and apply the method to study the strain-tunability of excitons in zirconium triselenide, a 2D semiconductor with an interesting in-plane anisotropic crystal structure.