The photoemission characteristics of a NEA InGaN photocathode by simultaneously supplying Cs and O2
SSRN Electronic Journal(2022)
摘要
A high quantum efficiency (QE) can be obtained on negative electron affinity (NEA) surfaces. It is well-known that NEA surfaces can be formed on semiconductor materials such as GaAs by the alternating supply of cesium (Cs) and oxygen (O2), which is called the yo-yo method. While GaN and related compounds such as InGaN are expected to realize an NEA photocathode with a long lifetime, the surface reactions between GaAs and nitride semiconductors are completely different with respect to the increasing rate of QE induced by the supply of O2. In addition, the surface processes of photoemission from NEA nitride semiconductors have not yet been elucidated. In the present study, a higher QE was achieved in InGaN by simultaneously supplying Cs and O2 instead of using the conventional yo-yo method. The possible Cs adsorption states in relation to the photoemission are also discussed based on the QE tendencies and the temperature programmed desorption (TPD) spectra of the NEA surfaces formed under elevated temperature conditions. This study suggests that the Cs oxide species, which is one of the key compounds for imparting the NEA nature, decomposes at approximately 350 degrees C and that the InGaN-Cs2O2 structure is a possible candidate for NEA photocathodes.
更多查看译文
关键词
Negative electron affinity surface,NEA activation,NEA photocathode,InGaN,Temperature desorption programmed method
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要