System of automatic control of measurement of industrial controlled parameters of silicon for porous substrates

Purpose. The article discusses the features of improving the technology of growing gallium arsenide ingots for the production of substrates that are intended for applying a porous film. Such porous gallium arsenide is used to manufacture gas sensors with improved technical parameters. Such sensors are highly sensitive and can operate at room temperature without the use of heating systems. To improve the technology of growing gallium arsenide ingots, the paper proposes the development of software for an information-control system for growing ingots. The features of the technological process of growing gallium arsenide ingots are considered in detail and the main parameters that directly affect the process are analyzed. Based on the analysis, the requirements for the operation algorithm of the information and control system have been developed. Methodology. The developed algorithm allows organizing the system operation in three modes; Technologist mode, operator mode, adjuster mode. Each mode has its own privileges and its own limitations. In addition, the algorithm allows organizing control and output of information from the following subsystems: heater control subsystem, crucible control subsystem, seed control subsystem, weight sensor control subsystem, as well as storing information in the database. Results. Software has been developed that implements this algorithm. The technologist mode is designed to form the growth profile of ingots. The technologist can choose one of the existing profiles previously recorded with reference to the ingot brand, or create a new profile in case of launching a new batch of products. The profile allows you to bind changes in technological parameters to the length of the ingot. In the "Operator" mode, the system displays current information about the technological process and allows you to organize work in automatic or manual mode. Manual mode is designed to adjust the process parameters in case of emergency situations. In the “Adjuster” mode, it is possible to configure the control system depending on specific requirements, change the PID controller coefficients, and configure input and output signals. Originality. The proposed program differs from the existing ones in that it allows you to freely configure the control system for the growth of gallium arsenide ingots, in particular, to change the parameters with reference to the length of the grown ingot or to the diameter of the ingot. Change the parameters of the inputs and outputs of the controllers. Practical value. The developed system makes it possible to improve the quality of gallium arsenide ingots by eliminating the human factor, which often leads to process parameters going beyond acceptable values, to increase the repeatability of ingot parameters, and to obtain better substrates for manufacturing gas sensors. The proposed software can be used for the system of growing silicon ingots in the electronics industry. Figures 4, references 14.