C-Si interface on SiO2/(1 1 1) diamond p-MOSFETs with high mobility and excellent normally-off operationXiaohua Zhu,Te Bi,Xiaolu Yuan,Yuhao Chang,Runming Zhang,Yu Fu,Juping Tu,Yabo Huang,Jinlong Liu,Chengming Li,Hiroshi KawaradaApplied Surface Science(2022)引用 7|浏览2暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要