Influence of Plasma Species on the Growth Mode and Material Properties of Indium Nitride Grown by Plasma-Assisted Atomic Layer Epitaxy.

improvement was observed at high annealing temperatures. At lower annealing temperatures, increased blueshifts were observed for samples grown with a higher proportion of atomic N; however, there was no noticeable influence of ions on blueshift regardless of whether atomic N or metastable N{sub 2}* was the dominant species present in the plasma. The key implication of this work is that it helps to elucidate a possible reason for some of the contradictory reports in the literature. The ions are not solely responsible for the commonly reported ''plasma damage.'' Furthermore, we demonstrate herein that atomic N and metastable N{sub 2}* each have different effects on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy.