Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions

R. Fontanini, J. Barbot,M. Segatto,S. Lancaster,Q. Duong,F. Driussi,L. Grenouillet, L. Triozon,J. Coignus,T. Mikolajick,S. Slesazeck,D. Esseni

IEEE Journal of the Electron Devices Society（2022）

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摘要

We here report a joint experimental and theoretical analysis of polarization switching in ferroelectric tunnel junctions. Our results show that the injection and trapping of charge into the ferroelectric-dielectric stack has a large influence on the polarization switching. Our results are relevant to the physical understanding and to the design of the devices, and for both memory and memristor applications.

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关键词

Ferroelectric tunnel junction,FTJ,HZO,synaptic memristor,charge trapping,interfacial charge,polarization switching,neuromoprhic computing,artificial intelligence

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