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面向异质集成的Au-Sn、Au-In晶圆级键合

WU Yan,LIU Pengfei,JIANG Lili

Research & Progress of Solid State Electronics（2021）

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Abstract
针对高温(＞300℃)及低温(＜200℃)键合应用场景,提出了一种多沟槽键合结构,对键合参数、金属层厚度等方面进行优化,实现了基于Au-Sn键合、Au-In键合的三层GaAs-Si异质晶圆级堆叠.Au-Sn键合强度均大于293.10 MPa,键合区内观测到高强度、高可靠性的AuSn共晶组织.研究了单面In结构的Au-In扩散机理,提出不同阶段下Au-In扩散顺序及生成的金属间化合物.
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