An Improved Parasitic Parameter Extraction Method for InP HEMT

An improved parasitic parameter extraction method for InP high electron mobil?ity transistor (HEMT) is presented. Parasitic parameter extraction is the first step of model parameter extraction and its accuracy has a great impact on the subsequent internal pa?rameter extraction. It is necessary to accurately determine and effectively eliminate the parasitic effect, so as to avoid the error propagation to the internal circuit parameters. In this paper, in order to obtain higher accuracy of parasitic parameters, parasitic parameters are extracted based on traditional analytical method and optimization algorithm to obtain the best parasitic parameters. The validity of the proposed parasitic parameter extraction method is verified with excellent agreement between the measured and modeled S-param?eters up to 40 GHz for InP HEMT. In 0.1–40 GHz InP HEMT, the average relative error of the optimization algorithm is about 9％ higher than that of the analysis method, which verifies the validity of the parasitic parameter extraction method. The extraction of parasit?ic parameters not only provides a foundation for the high-precision extraction of small sig?nal intrinsic parameters of HEMT devices, but also lays a foundation for the high-preci?sion extraction of equivalent circuit model parameters of large signal and noise signals of HEMT devices.