对改性晶圆上制备的PDSOI NMOS器件热载流子效应的全面认识
Atomic Energy Science and Technology（2021）
Abstract
通过与常规器件的对比,本文详细研究了在硅离子注入改性晶圆上制备的PDSOI NMOS的热载流子诱导退化现象.理论分析和TCAD模拟结果表明,硅离子注入在埋氧层中引入的电子陷阱能够捕获注入的电子,并通过改变电场来影响氧化层的热载流子退化.在不同的应力条件下,其效果也有所不同.对改性器件施加热载流子应力时,改性器件的前栅和背栅之间存在着更明显的相互作用.同时,探讨了总剂量辐照对改性器件热载流子退化的影响.在改性器件中存在辐照增强的热载流子退化,高温退火只能部分消除这一影响.
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Key words
total dose irradiation,radiation hardening,PDSOI NMOS,hot carrier effect,modified device
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