Uniform, fast, and reliable CMOS compatible resistive switching memory

Resistive switching random access memory (RRAM) is considered as one of the potential candidates for next-generation memory. However, obtaining an RRAM device with comprehensively excellent performance, such as high retention and endurance, low variations, as well as CMOS compatibility, etc., is still an open question. In this work, we introduce an insert TaOx layer into HfOx-based RRAM to optimize the device performance. Attributing to robust filament formed in the TaOx layer by a forming operation, the local-field and thermal enhanced effect and interface modulation has been implemented simultaneously. Consequently, the RRAM device features large windows (> 10(3)), fast switching speed (similar to 10 ns), steady retention (> 72 h), high endurance (> 10(8) cycles), and excellent uniformity of both cycle-to-cycle and device-to-device. These results indicate that inserting the TaOx layer can significantly improve HfOx-based device performance, providing a constructive approach for the practical application of RRAM.