不同雾流速率下α-Ga2O3薄膜的超声雾化化学气相沉积法外延生长
Electroplating & Finishing（2022）
Abstract
研究了超声雾化化学气相沉积(Mist-CVD)法外延生长α-Ga2O3薄膜过程中通入雾流速率的调控及其对薄膜生长质量的影响.利用COMSOL Multiphysics软件仿真得到在0.1～0.2 m/s的雾流速率下基板表面具有稳定的雾流和较小的温度变化.对比了通入雾流速率为0.118、0.177和0.251 m/s时所生长的α-Ga2O3薄膜的差异.X射线衍射(XRD)表明在上述3种速率下均成功外延生长出α-Ga2O3薄膜.薄膜生长速率在一定范围内随着雾流速率的增加而提高,但当雾流通入速率过高时,α-Ga2O3薄膜表面发生翘曲开裂,且其光学带隙变小.
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