Extraction of SnO Subbandgap Defect Density by Numerical Modeling of p-Type TFTs
IEEE Transactions on Electron Devices（2022）
Abstract
Recently, p-type tin monoxide (SnO) thin-film transistors (TFTs) have gained interest for all-oxide complementary metal–oxide semiconductor (CMOS) circuits for flexible electronics and back-end-of-line integration with Si. However, most SnO TFTs demonstrated so far exhibit a low on– off-current ratio and limited field effect mobility. To understand and improve SnO TFT performance, it is necessary ...
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Key words
Numerical models,Thin film transistors,Logic gates,Semiconductor device modeling,Tail,Silicon,Atmospheric modeling
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