Localized Backside Etching Structure of SOI Substrates on Total Ionizing Dose Effect Hardening for RF Applications
IEEE Transactions on Electron Devices（2022）
Abstract
In this work, the localized backside etching (LBE) structure is introduced as a strategy for total ionizing dose (TID) irradiation hardening. Immunity to TID-irradiation-induced radio frequency (RF) property degradation is observed for the first time in SOI substrates with the LBE structure. Identical co-planar waveguide transmission lines (CPW TLines), crosstalk characterization structures, and p...
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Key words
Substrates,Radio frequency,Silicon,Radiation effects,Coplanar waveguides,Attenuation,Inductors
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