Modelling of Charge Injection by Multi-Photon Absorption in GaN-on-Si HEMTs for SEE Testing
MICROELECTRONICS RELIABILITY（2021）
Key words
Laser testing,Modelling,GaN HEMT,Radiation effects,Single event effects
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined