Structural and Chemical State Analyses on Nitrided GaOOH as a Visible Light Response Photocatalyst

To prepare photocatalysts promoting water splitting under visible light irradiation, GaOOH was nitrided by the calcination at a temperature ranging from 773 to 1273 K under a NH3 flow to produce nitrogen doped Ga2O3. X-ray diffraction measure-ments suggested that even under NH3 atmosphere dehydration of GaOOH to alpha-Ga2O3 occurred by calcining below 873 K. In the samples nitrided above 973 K, gallium nitride (GaN) phase started to appear and the crystallinity became better with in-creasing the nitriding temperature. In diffuse reflectance ultravi-olet-visible measurements, absorption bands appeared in the visible light region after the nitrization, and the shift of the ab-sorption edge with nitriding temperature suggested the formation of a new phase like gallium oxy-nitride. X-ray photoelectron spectroscopy and scanning transmission electron microsco-py-electron energy-loss spectroscopy analyses revealed that oxygen atoms were distributed homogeneously and mixed with ni-trogen atoms in the sample nitrided at 1173 K [referred as S(1173 K)] while oxygen atoms were mainly distributed at the surface of the sample nitrided at 1273 K [S(1273 K)]. The differences in the composition and chemical state near the sample surface closely related to the activity and stability during water splitting reaction under visible light irradiation between S(1173 K) and S(1273 K), i.e., the former sample provided stable H2 and O2 evolution while the latter sample was inactive and unstable.