Optical Gates Based on Semiconductor Quantum Wells A $${}_{\mathbf{3}}$$ B $${}_{\mathbf{5}}$$
Optoelectronics, Instrumentation and Data Processing（2022）
Abstract
The influence of the structure of quantum wells and the features of their manufacturing technology on the performance and maximum modulation depth of optical gates based on quantum wells A
$${}_{3}$$
B
$${}_{5}$$
, designed for mode locking of near-IR lasers, is analyzed.
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Key words
quantum wells, excitonic absorption in quantum wells, electron–hole recombination, charge carrier tunneling between quantum wells
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