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Building P-doped MoS2/g-C3N4 layered heterojunction with a dual-internal electric field for efficient photocatalytic sterilization

CHEMICAL ENGINEERING JOURNAL(2022)

Cited 134|Views19
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Abstract
The construction of internal electric field (IEF) is usually considered an effective strategy to enhance photocatalytic efficiency because of its significant role in photo-induced carrier separation. Herein, we report a novel method to synthesize phosphorus-doped (P-doped) MoS2/g-C3N4 layer-by-layer composite, which could expose more active sites and generate a strong interaction by forming Mo-N bonds for photocatalytic sterilization. It is experimentally and theoretically confirmed that P-doped MoS2/g-C3N4 heterojunctions not only generate a dualIEF to drive charge migration, but also facilitate spatially separated redox sites to further promote the separation of photo-induced carrier. The optimized P-doped MoS2/g-C3N4 layered heterojunction exhibits high photocatalytic sterilization efficiency (99.99%) towards E. coli under visible-light irradiation, which is remarkably higher compared with those of P-doped g-C3N4 (44.73%) and P-doped MoS2 (61.69%), respectively. This research will offer a novel method of designing and synthesizing layered composite photocatalyst with a dual-IEF for effective photocatalytic sterilization.
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Key words
Layered heterojunction,Dual-internal electric field,Separated redox sites,Photocatalytic sterilization,P-doped MoS2,g-C3N4
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