Room-Temperature Processed Lateral Trench-Metal-Insulator-Semiconductor Schottky Barrier Diodes with Amorphous Gallium Oxide (a-Ga2O3) Thin Films on Single-Crystal Silicon

This article proposes a novel design approach for the fabrication of lateral Schottky barrier diodes (SBD) using a wide bandgap oxide semiconductor on silicon. Structural and electrical properties of the fabricated device are reported and compared with published data. The metal-insulator-semiconductor (MIS) Schottky barrier is realized between the room-temperature sputtered Al/a-Ga2O3 on single-crystal boron-doped silicon substrate (p-type). The device fabrication process is implemented entirely at room temperature. The proposed trench diode yields an ideality factor of 1.65 and a rectification ratio of approximate to 1 x 10(6) at +/- 5.0 V. The extracted specific ON resistance is 78 m omega cm(2), and the breakdown voltage is not observed for 180 V for a 200-nm-thin layer of a-Ga2O3. Due to such low-temperature process, simple fabrication steps, and notably high Baliga's figure-of-merit (BFOM), the proposed diode is, therefore, promising for power electronics applications.