Design of THz Monolithic Source and Detector in 40-nm CMOS

This paper presents a fully integrated THz detection system with operating frequency of 309GHz in 40-nm CMOS process technology. The detection system includes THz signal source and THz detector. The THz source is composed of dual-core oscillator, and each core uses cross-coupled push-push circuit structure. The frequency tuning is controlled by changing the bulk voltage, and an interconnection inductor is added between the gates of MOSFET to further improve the output power of the oscillator, an on-chip antenna with T-shaped slot is designed for THz wave radiation. The THz detector uses the self-mixing structure; in order to improve the responsivity, the mixer is followed by a cascode amplifier with switch. A serpentine on-chip antenna is simulated and designed to receive THz wave. The measurement results show that THz signal source has the radiated power of − 10dBm with the power dissipation of 64mW. At 309GHz, the detector achieves a maximum voltage responsivity of 40kV/W and noise equivalent power of 62.5pW/√(Hz) at the sub-threshold gate voltage of 0.41V.