Damage and annealing behavior in neutron-irradiated SiC used as a post-irradiation temperature monitor

Guangsheng Ning,Limin Zhang,Weihua Zhong,Shenghong Wang,Jian Liu,Changyi Zhang

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms（2022）

Cited 12|Views5

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Abstract

•SiC crystal was used as an irradiation temperature monitor in a thermal reactor.•The irradiation temperature is overestimated by an electrical measurement of SiC.•Annealing-induced elimination of Ci accounts for the electrical changes in SiC.•Hardness of SiC increases with neutron irradiation and then decreases by annealing.

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Key words

Silicon carbide monitor,Neutron irradiation,Temperature measurement

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