High-energy photoelectron spectroscopy of Si3N4 thin film on Si with Cr K-a excitation

Pierre-Marie Deleuze,Kateryna Artyushkova,Eugenie Martinez,Olivier Renault

SURFACE SCIENCE SPECTRA（2022）

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摘要

Si3N4 thin film grown by low-pressure chemical vapor deposition was measured by high-energy photoelectron spectroscopy using monochromatic Cr K-alpha (5414.8 eV) radiation. A survey scan and high-resolution spectra of Si 1s, Si 2s, Si 2p, and N 1s are reported.

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关键词

Si3N4, HAXPES, Cr K-alpha

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