High-energy photoelectron spectroscopy of Si(100) with Cr K excitation

Pierre-Marie Deleuze,Kateryna Artyushkova,Eugenie Martinez,Olivier Renault

SURFACE SCIENCE SPECTRA（2022）

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摘要

Si (100) wafer was analyzed by high-energy photoelectron spectroscopy (HAXPES) using monochromatic Cr K-alpha radiation (5414.8 eV). The HAXPES spectra reported here include a survey scan and high-resolution spectra of Si 1s, Si 2s, and Si 2p core-levels.

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关键词

Si,HAXPES,Cr K-alpha

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