High-energy photoelectron spectroscopy of Si(100) with Cr K excitation
SURFACE SCIENCE SPECTRA(2022)
摘要
Si (100) wafer was analyzed by high-energy photoelectron spectroscopy (HAXPES) using monochromatic Cr K-alpha radiation (5414.8 eV). The HAXPES spectra reported here include a survey scan and high-resolution spectra of Si 1s, Si 2s, and Si 2p core-levels.
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关键词
Si,HAXPES,Cr K-alpha
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