Equivalent circuit modeling in GaN wireless power transmission including stray inductance and capacitance by measuring radiated emission

We establish the method for estimating the stray elements of the GaN-WPT circuit by measuring the radiated emission around the GaN switching device. By controlling the circuit supply voltage, the spectrum peak shift due to the output capacitance of the GaN-HEMT is observed. It is found that these peak shift characteristics include the influence of both the stray wire inductance and stray capacitance. By fitting using the series resonance model, the value of the stray inductance and stray capacitance can be estimated in the non-destructive measurement in the GaN-WPT circuit.