Generation, relaxation and annealing of Si/SiO2 charges induced by low-energy electron beam

Sergei Koveshnikov,Maxim Knyazev,Oleg Soltanovich

Materials Science and Engineering: B（2021）

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摘要

•Charges in Si/SiO2 structures are generated under low energy electron beam.•Negative charge is induced in Si/SiO2 structures at low irradiation doses.•Equilibrium between trap generation and annihilation leads to charge saturation.•Negative oxide charge remains after anneal at 250 °C compensating positive charge.•Charge control in SiO2 is crucial for GLF growth, SOI structures and memory devices.

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关键词

Silicon oxide,MOS devices,Electron beam irradiation,Interface states,Oxide charge

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