MOSFET-Based Memristor for High-Frequency Signal Processing
IEEE Transactions on Electron Devices(2022)
摘要
This research article proposes a floating memristor emulator configuration based on n-type MOSFETs only. The proposed memristor comprises three nMOS and an extra nMOS for an external grounded capacitor. Compared to the existing literature, the proposed floating MOS memristor enables a simple design without any sophisticated design complexity. The actual fingerprint of the memristor as a pinched hy...
更多查看译文
关键词
Memristors,Mathematical models,Hysteresis,Capacitors,Resistance,MOSFET,Voltage control
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要