Mechanism Analysis of Ultralow Leakage and Abnormal Instability in InGaZnO Thin-Film Transistor Toward DRAM

Gangping Yan,Hong Yang,Weibing Liu,Na Zhou,Yanpeng Hu,Yunfei Shi,Jianfeng Gao,Guoliang Tian,Yadong Zhang,Linjie Fan,Guilei Wang,Gaobo Xu,Jinshun Bi,Huaxiang Yin,Chao Zhao,Jun Luo

IEEE Transactions on Electron Devices（2022）

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摘要

In this article, mechanisms of extremely low OFF-state current and abnormal negative bias stress (NBS) are systematically investigated by the varying process that contains various gas ratios and gas flows during In–Ga–Zn–O (IGZO) sputtering, and different annealing conditions. One model is proposed to indicate the level of ultralow leakage in IGZO thin-film transistor (TFT) dominated by the trap-l...

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关键词

Annealing,Random access memory,Thin film transistors,Transistors,NIST,Atmosphere,Thermal stability

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