Room-temperature ferroelectric switching

NATURE ELECTRONICS(2021)

引用 6|浏览8
暂无评分
摘要
Ferroelectric switching of spin-to-charge conversion can be achieved at room temperature in germanium telluride — a Rashba ferroelectric semiconductor — deposited on a silicon substrate.
更多
查看译文
关键词
Electronic devices,Spintronics,Electrical Engineering
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要