Atomic Structure and Optical Properties of CaSi2 Layers Grown on CaF2/Si Substrates

The specific features of growth and the structural and optical properties of GaSi2 layers formed by the successive deposition of Si and CaF2 onto a Si(111) substrate with simultaneous irradiation with a high-energy electron beam are studied. The Raman spectra recorded for the electron-beam-irradiated regions exhibit peaks characteristic of CaSi2 crystal layers. Studies of the surface morphology of the structures formed show that, under the conditions of synthesis chosen, the formation of CaSi2 layers upon electron irradiation proceeds by a two-dimensional layer mechanism. The photoluminescence spectra recorded for the regions modified by the electron beam greatly differ from the spectra recorded outside these regions.