UWBG AlN/beta-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications

Ultra-wide bandgap (E-g > 3.4 eV) channel HEMTs are attractive choice for next generation power electronics. In recent years, beta-Ga2O3 based field effect transistors are demonstrating excellent device performance due to its high breakdown field (E-cr similar to 8 MV/cm) and good transport properties. We report DC and RF characteristics of AlN/beta-Ga2O3 HEMTs on Silicon Carbide (SiC) substrate. Compared with conventional III-nitride channel-based HEMTs, the AlN/beta-Ga2O3 HEMT shows larger 2DEG (two-dimensional electron gas) density, improved drain current density, and breakdown voltage with low on-resistance. The gate field plate AlN/beta-Ga2O3 HEMT with gate length (L-G) of 800 nm and gate-drain (L-GD) distance of 1 mu m, and source-drain distance (L-SD) of 2.6 mu m shows ON-state current density (I-DS of 0.6 A/mm, transconductance (g(m)) of 288 mS/mm, blocking voltage (V-BR) of 509 V, on-resistance (R-on) of 1.13 Omega.mm, current gain cut-off frequency (F-T) of 27.1 GHz, power gain cut-off frequency (F-MAX) of 72.3 GHz, and Johnson Figure of merit (JFoM = V(BR )x F-T) of 13.793 THz.V. Moreover, the proposed HEMT exhibits very low switching delay of 3.5 pS, and switching loss of 1.9 x 10(-16) J. These findings reveal that the proposed AlN/beta-Ga2O3 HEMTs on SiC substrate are suitable candidates for future portable low switching loss power converters and RF applications.