Packaging Design of 15 kV SiC Power Devices With High-Voltage Encapsulation
IEEE Transactions on Dielectrics and Electrical Insulation(2022)
摘要
Silicon carbide (SiC) is capable of improving the blocking voltage of power devices. It is essential to package SiC power devices for high-voltage applications. This article proposes a high-voltage packaging method for >15-kV SiC power devices by designing an optimized stacked direct bond copper (DBC) substrate with a copper ring and a field-dependent conductivity (FDC) encapsulation using SiC ...
更多查看译文
关键词
Electric fields,Partial discharges,Copper,Encapsulation,Silicon carbide,Substrates,Metallization
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要