Packaging Design of 15 kV SiC Power Devices With High-Voltage Encapsulation

IEEE Transactions on Dielectrics and Electrical Insulation(2022)

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摘要
Silicon carbide (SiC) is capable of improving the blocking voltage of power devices. It is essential to package SiC power devices for high-voltage applications. This article proposes a high-voltage packaging method for >15-kV SiC power devices by designing an optimized stacked direct bond copper (DBC) substrate with a copper ring and a field-dependent conductivity (FDC) encapsulation using SiC ...
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关键词
Electric fields,Partial discharges,Copper,Encapsulation,Silicon carbide,Substrates,Metallization
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