Layer and material-type dependent photoresponse in WSe2/WS2 vertical heterostructures

Transition metal dichalcogenide (TMD) heterostructures are promising for a variety of applications in photovoltaics and photosensing. Successfully exploiting these heterostructures will require an understanding of their layer-dependent electronic structures. However, there is no experimental data demonstrating the layer-number dependence of photovoltaic effects (PVEs) in vertical TMD heterojunctions. Here, by combining scanning electrochemical cell microscopy (SECCM) with optical probes, we report the first layer-dependence of photocurrents in WSe2/WS2 vertical heterostructures as well as in pristine WS2 and WSe2 layers. For WS2, we find that photocurrents increase with increasing layer thickness, whereas for WSe2 the layer dependence is more complex and depends on both the layer number and applied bias (V-b ). We further find that photocurrents in the WSe2/WS2 heterostructures exhibit anomalous layer and material-type dependent behaviors. Our results advance the understanding of photoresponse in atomically thin WSe2/WS2 heterostructures and pave the way to novel nanoelectronic and optoelectronic devices.