Protonated g-C3N4-based nonvolatile memories with good environmental robustness assisted by boron nitride

•Memory devices fabricated with protonated g-C3N4 can exhibit enhanced memory performances, in which acid concentration is crucial.•g-C3N4 treated with 8 M HCl presents the best resistive switching performance, which might be relative to its texture without violent tortuosity.•The protonated g-C3N4-based memory devices present good environmental robustness, including temperature and ionizing irradiation.•The high tolerant temperature (454 °C) can also be enhanced by doping BN for heat dissipation.