Physics based modeling of AlGaN/BGaN quantum well based ultra violet light emitting diodes

This work investigates the multiple quantum well ultraviolet light emitting diode (LED) with AlGaN/BGaN/AlGaN active stack layers. The thickness and the boron concentration of BGaN quantum well are fixed as 3 nm and 10% respectively. The performance of this BGaN based UV LED is analyzed and benchmarked with GaN well LED. In the simulation, various physical models are used to calibrate the simulation and obtain realistic optical performance.The models used in the simulation are Shockley–Reed–Hall (SRH) recombination model, Auger recombination model, K.P model, and Lorentz model. The parameters analyzed in this work are radiative recombination rate, luminous/optical power, and internal quantum efficiency (IQE). It is observed that the strong bandgap bowing effect of boron doped BGaN leads to an increase in the optical power and quantum efficiency of AlGaN/BGaN Multiple quantum well LED. Furthermore, a physics-based model is developed to extract the non-radiative and radiative recombination mechanisms in the structure. It is found that the modeled data shows a good fit compared to the simulated results.